IndiumV3, Main, Repository, bibRecord, 005724

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

Identifieur interne : 005724 ( Main/Repository ); précédent : 005723; suivant : 005725

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

Auteurs : RBID : Pascal:09-0309603

Descripteurs français

Pascal (Inist)
- Diode électroluminescente, Dispositif microélectromécanique, Luminescence, Rayonnement visible, Structure suspendue, Polarisation, Source lumière, Lumière blanche, Histoire.
Wicri :
- concept : Histoire.

English descriptors

KwdEn :
- History, Light emitting diodes, Light sources, Luminescence, Microelectromechanical device, Polarization, Suspended structure, Visible radiation, White light.

Abstract

This article reviews the development of nonpolar and semipolar InGaN/GaN light-emitting diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED development on each orientation is provided, followed by a discussion of the most relevant and recent results. The context is related to several current LED issues, such as the realization of high-efficiency white solid-state lighting, potential solutions to the "green gap," and applications for polarized emitters. The section on nonpolar LEDs highlights high-power violet and blue emitters and considers the effects of indium incorporation and substrate miscut. The section on semipolar GaN reviews the development of LEDs in the violet, blue, green, and yellow regions and highlights the potential of InGaN/GaN LEDs as an alternative technology to AllnGaP for yellow emitters. A brief review of polarization anisotropy also is included for each orientation. Finally, a two source white light system utilizing a nonpolar blue LED and a semipolar yellow LED is presented.

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Pascal:09-0309603

Le document en format XML

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<author><name sortKey="Feezell, Daniel F" uniqKey="Feezell D">Daniel F. Feezell</name>
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<author><name sortKey="Denbaars, Steven P" uniqKey="Denbaars S">Steven P. Denbaars</name>
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<front><div type="abstract" xml:lang="en">This article reviews the development of nonpolar and semipolar InGaN/GaN light-emitting diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED development on each orientation is provided, followed by a discussion of the most relevant and recent results. The context is related to several current LED issues, such as the realization of high-efficiency white solid-state lighting, potential solutions to the "green gap," and applications for polarized emitters. The section on nonpolar LEDs highlights high-power violet and blue emitters and considers the effects of indium incorporation and substrate miscut. The section on semipolar GaN reviews the development of LEDs in the violet, blue, green, and yellow regions and highlights the potential of InGaN/GaN LEDs as an alternative technology to AllnGaP for yellow emitters. A brief review of polarization anisotropy also is included for each orientation. Finally, a two source white light system utilizing a nonpolar blue LED and a semipolar yellow LED is presented.</div>
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Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri